| PART |
Description |
Maker |
| KVR133X64C3L512 KVR133X64C3L_512 KVR133X64C3L/512 |
512MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm
512MB6x位的PC133 CL3超薄168针DIMM
|
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| KVR133X64C3256 KVR133X64C3_256 KVR133X64C3/256 |
256MB 32M x 64Bit PC133 CL3 Low Profile 168-Pin Dimm Module
|
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| HYS72V32220GU-8-C2 HYS64V16300GU HYS64V16300GU-7.5 |
SDRAM Modules - 256MB PC133 (2-2-2) 2-bank End-of-Life
SDRAM Modules - 256MB PC133 (2-2-2) 2-bank (ECC) End-of-Life
SDRAM Modules - 128MB PC133 (2-2-2) 1-bank (ECC) End-of-Life
SDRAM Modules - 128MB PC133 (2-2-2) 1-bank End-of-Life
SDRAM Modules - 256MB PC133 (3-3-3) 2-bank (ECC) End-of-Life
SDRAM Modules - 128MB PC133 (3-3-3) 1-bank (ECC) End-of-Life
SDRAM Modules - 256MB PC133 (3-3-3) 2-bank End-of-Life
SDRAM Modules - 128MB PC133 (3-3-3) 1-bank End-of-Life
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules
|
INFINEON[Infineon Technologies AG]
|
| HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3
256Mb (32M x 8) PC133 3-3-3
256Mb (32M x 8) PC100 2-2-2 56Mb的（32M的8）PC100-2-2
x16 SDRAM x16内存
|
Toshiba, Corp.
SIEMENS AG
|
| KVR133X64C364 KVR133X64C3_64 KVR133X64C3/64 |
64MB 8M x 64-BIT PC133 CL3 168-PIN DIMM Module
|
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| KVR133X64C3/1G |
1024MB 128M x 64-Bit PC133 CL3 168-Pin DIMM Module
|
Kingston Technology
|
| KVR133X64C2/256 |
256MB 32M x 64-Bit PC133 CL2 168-Pin DIMM Module
|
Kingston Technology
|
| V437216C04VDTG-75 V43716C04VDTG-75 |
3.3 VOLT 16M x 72 HIGH PERFORMANCE PC133 REGISTER PLL ECC SDRAM MODULE
3.3V 16M x 72 high performance PC133 register PLL ECC SDRAM module
|
Mosel Vitelic Corp
|
| KVR400X64C3AK2/1G |
1024MB 400MHz DDR Non-ECC CL3 (3-3-3) DIMM (Kit of 2) 1024MB00MHz的复员非ECC CL3-3-3）内存（2盒）
|
Ecliptek, Corp.
|
| KVR400X64C3A/1G |
1024MB 400MHz DDR Non-ECC CL3 (3-3-3) DIMM 1024MB00MHz的复员非ECC CL3-3-3）内
|
Electronic Theatre Controls, Inc.
|
| HYS72V16220GU HYS64V16220GU HYS64V8300GU HYS72V830 |
3.3 V 16M × 64-Bit × 2 Bank同步动态DRAM Module(3.3 V 16M × 64-× 2列同步动态RAM模块)
3.3 V 16M × 72-Bit × 2 Bank同步动态DRAM Module(3.3 V 16M × 72-× 2列同步动态RAM模块)
3.3 V 8M × 64-Bit × 1 Bank同步动态DRAM Module(3.3 V 8M × 64-× 1列同步动态RAM模块) 3.3800万64位1行同步动态内存（3.38米64 -位1列同步动态内存模块）
|
SIEMENS AG
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
